| PART |
Description |
Maker |
| 2SC5384 2SC5384-10 |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corpora...
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| RT2A00AM1 |
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION
|
Isahaya Electronics Cor...
|
| 2SK43310 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Corpora...
|
| 2SC5938 2SC5938B 2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INA5001AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ETC[ETC]
Isahaya Electronics Corporation
|
| INA6002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INA6006AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO
|
ISAHAYA[Isahaya Electronics Corporation]
ETC[ETC]
|
| 2SC5482 2SC548212 |
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
|
Isahaya Electronics Corporation
|
